Light emitting diode device

ABSTRACT

The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of U.S. application Ser.No. 13/661,272, filed on Oct. 26, 2012, now allowed. The prior U.S.application Ser. No. 13/661,272 claims the priority benefit of Taiwanapplication serial no. 100143830, filed on Nov. 29, 2011. The entiretyof each of the above-mentioned patent applications is herebyincorporated by reference herein and made a part of this specification.

FIELD OF THE INVENTION

The present invention relates generally to a light emitting diode (LED)device, and particularly to an LED device having excellent Ohmic-contactcharacteristics and light emitting efficiency.

BACKGROUND OF THE INVENTION

Electricity is an indispensable energy nowadays. No matter lightingdevices, home appliances, communication apparatuses, transportation, orindustrial equipment, without electricity, none can operate. Currentglobal energy mainly comes from burning petroleum or coal. However, thesupply of petroleum or coal is not inexhaustible. If people don't searchactively for alternative energy, when petroleum or coal is exhausted,the world will encounter energy crisis. For solving the problem ofenergy crisis, in addition to developing positively various kinds ofrenewable energy, it is required to save energy and use energyefficiently for improving the usage efficiency of energy.

Take lighting equipment as an example. Light equipment is indispensablein human lives. As technologies develop, lighting tools having betterluminance and more power saving are gradually provided. Currently, anemerging light source is LED. In comparison with light sources accordingto prior art, LEDs have the advantage of small size, power saving, goodlight emitting efficiency, long lifetime, fast response time, no thermalradiation, and no pollution of poisonous materials such as mercury.Thereby, in recent years, the applications of LEDs are wide-spreading.In the past, the brightness of LEDs still cannot replace the lightsources according to the prior art. As the technologies advance,high-luminance LEDs (high-power LEDs) are developed recently andsufficient to replace the light sources according to the prior art.

The epitaxial structure of LED is composed of semiconductor layers ofp-type and n-type gallium-nitride family and light emitting layers. Thelight emitting efficiency of LED is determined by the quantum efficiencyof the light emitting layer as well as the extraction efficiency of theLED. The method for increasing the quantum efficiency is mainly toimprove the epitaxial quality and the structure of the light emittinglayer; the key to increasing the extraction efficiency is to reduce theenergy loss caused by reflection of the light emitted by the lightemitting layer within the LED.

Depending on the property of the material of the p-type semiconductorlayer and the work function of the metal used as the reflection layer,an Ohmic-contact or a Schottky contact is formed between the p-typesemiconductor layer and the reflection layer of a general LED. When theresistance of an Ohmic-contact is too high, the operatingcharacteristics of LED will be affected. It is thereby required to lowerthe resistance of the Ohmic-contact. The Ohmic-contact characteristicsbetween the p-type semiconductor layer and the reflection layer can beimproved by disposing an Ohmic-contact layer therebetween. TheOhmic-contact layer according to the prior art adopts a Ni/AuOhmic-contact layer and heat treatment is performed on the Ohmic-contactlayer for forming a good Ohmic-contact. Nonetheless, the lightabsorption rate of the Ni/Au Ohmic-contact layer is higher. Besides, theinterface between the p-type semiconductor layer and the Ni—AuOhmic-contact layer is roughened due to the heat treatment and leadingto inability in reflecting light. Consequently, the reflectionefficiency of the LED will be reduced.

For solving the problems described above, please refer to FIG. 1, whichshows a structure diagram of the LED device according to the prior art.As shown in the figure, an Ohmic-contact layer 11′ is disposed betweenthe p-type semiconductor layer 10′ and the reflection layer 12′. TheOhmic-contact layer 11′ uses a single-layer metal-oxide layer and hashigh electrical conductivity. Although the Ohmic-contact layer 11′ hashigh electrical conductivity, it lowers the light transmittance, andhence leading to lowering of the light emitting efficiency of the LED.If the Ohmic-contact layer 11′ has high light transmittance, itselectrical conductivity will be reduced, making the Ohmic-contactcharacteristics of the Ohmic-contact layer 11′ inferior. Thereby, theOhmic-contact layer 11′ according to the prior art, which adopts asingle-layer metal-oxide layer, cannot have good Ohmic-contactcharacteristics while maintaining superior light emitting efficiency.

Accordingly, the present invention provides an LED device and aflip-chip packaged LED device having excellent Ohmic-contactcharacteristics as well as superior light emitting efficiency.

SUMMARY

An objective of the present invention is to provide an LED device. TheLED device can enhance its Ohmic-contact characteristics effectivelywhile maintaining superior light emitting efficiency.

An LED device according to an embodiment of the present inventioncomprises a first-type doping layer; a second-type doping layer; a lightemitting layer disposed between the first-type doping layer and thesecond-type doping layer; an Ohmic-contact layer disposed on thesecond-type doping layer; a material layer disposed on the Ohmic-contactlayer, the material layer at least comprises a metal oxide layer; afirst electrode disposed on and electrically connected to the first-typedoping layer; a second electrode; and a metal layer disposed between thesecond electrode and the Ohmic-contact layer, wherein the secondelectrode being electrically connected to the Ohmic-contact layerthrough the metal layer.

An LED device according to an embodiment of the present inventioncomprises a first-type doping layer; a second-type doping layer; a lightemitting layer disposed between the first-type doping layer and thesecond-type doping layer; an Ohmic-contact layer disposed on thesecond-type doping layer; an oxide stacking layer comprising a pluralityof oxide layers stacked on the Ohmic-contact layer; a first electrodedisposed on and electrically connected to the first-type doping layer; asecond electrode electrically connected to the Ohmic-contact layer; anda metal reflection layer, wherein the oxide stacking layer and the metalreflection layer are disposed between the second electrode and theOhmic-contact layer.

An LED device according to an embodiment of the present inventioncomprises a first-type doping layer; a second-type doping layer; a lightemitting layer disposed between the first-type doping layer and thesecond-type doping layer; an Ohmic-contact layer disposed on thesecond-type doping layer; an oxide stacking layer comprising a pluralityof oxide layers stacked on the Ohmic-contact layer; a first electrodedisposed on and electrically connected to the first-type doping layer; asecond electrode electrically connected to the Ohmic-contact layer; anda metal reflection layer, wherein the oxide stacking layer and the metalreflection layer are disposed between the second electrode and theOhmic-contact layer, and the second electrode is electrically connectedto the Ohmic-contact layer through the metal reflection layer.

An LED device according to an embodiment of the present inventioncomprises a first-type doping layer; a second-type doping layer; a lightemitting layer disposed between the first-type doping layer and thesecond-type doping layer; an Ohmic-contact layer disposed on thesecond-type doping layer; a first electrode disposed on and electricallyconnected to the first-type doping layer; a second electrodeelectrically connected to the Ohmic-contact layer; a metal reflectionlayer disposed between the second electrode and the Ohmic-contact layer;and at least one oxide layer disposed between the Ohmic-contact layerand the metal reflection layer.

An LED device according to an embodiment of the present inventioncomprises a first-type doping layer; a second-type doping layer; a lightemitting layer disposed between the first-type doping layer and thesecond-type doping layer; an Ohmic-contact layer disposed on thesecond-type doping layer; a first electrode disposed on and electricallyconnected to the first-type doping layer; a second electrode; a metalreflection layer disposed between the second electrode and theOhmic-contact layer; and at least one oxide layer disposed between theOhmic-contact layer and the metal reflection layer, wherein the secondelectrode is electrically connected the Ohmic-contact layer through themetal reflection layer.

An LED device according to an embodiment of the present inventioncomprises a first-type doping layer; a second-type doping layer; a lightemitting layer disposed between the first-type doping layer and thesecond-type doping layer; an Ohmic-contact layer disposed on thesecond-type doping layer; a first electrode disposed on and electricallyconnected to the first-type doping layer; a second electrodeelectrically connected to the Ohmic-contact layer; and a materialstacking layer disposed between the second electrode and theOhmic-contact layer, wherein the material stacking layer comprises aplurality of first material layers and a plurality of second materiallayers stacked alternately, and light transmittance of the firstmaterial layers differs from light transmittance of the second materiallayers.

According to the present invention, the highly conductive Ohmic-contactlayer is used for giving good current conduction between the second-typedoping layer and the reflection layer of the LED device and thusimproving the Ohmic-contact characteristics of the LED device. Inaddition, the present invention further uses the planarized buffer layerdisposed between the Ohmic-contact layer and the reflection layer formaking the surface of the Ohmic-contact layer smooth, which facilitatessmooth adhesion of the reflection layer to the planarized buffer layeras well as reducing the scattering phenomenon of the reflected light.Thereby, superior light emitting efficiency can be achieved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a structure diagram of the LED device according to theprior art;

FIG. 2 shows a structure diagram according to a preferred embodiment ofthe present invention;

FIG. 3 shows a structure diagram according to another preferredembodiment of the present invention;

FIG. 4 shows a structure diagram according to another preferredembodiment of the present invention; and

FIG. 5 shows a structure diagram according to another preferredembodiment of the present invention.

DETAILED DESCRIPTION

In order to make the structure and characteristics as well as theeffectiveness of the present invention to be further understood andrecognized, the detailed description of the present invention isprovided as follows along with embodiments and accompanying figures.

FIG. 2 shows a structure diagram according to a preferred embodiment ofthe present invention. As shown in the figure, the present embodimentprovides an LED device 22, which comprises a device substrate 221, afirst-type doping layer 222, a light emitting layer 223, a second-typedoping layer 224, an Ohmic-contact layer 225, a planarized buffer layer226, a reflection layer 227, and two electrodes 228, 229. The first-typedoping layer 222 is disposed on the device substrate 221; the lightemitting layer 223 is disposed on the first-type doping layer 222; andthe second-type doping layer 224 is disposed on the light emitting layer223. According to the present embodiment, the first-type doping layer222 is an n-type semiconductor layer, and the second-type doping layer224 is a p-type semiconductor layer. Besides, the Ohmic-contact layer225 is a metal thin film or a metal-oxide layer with light transmittancehigher than 90% and thickness less than 5000 angstroms (Å). The metalthin film can be composed by gold, nickel, platinum, aluminum, chrome,tin, indium, and their mixtures or alloys. The metal-oxide layer ischosen from the group consisting of indium-tin oxide, cerium-tin oxide,antimony-tin oxide, indium-zinc oxide, and zinc oxide.

Besides, the planarized buffer layer 226 is disposed on theOhmic-contact layer 225. The planarized buffer layer 226 is ametal-oxide layer with light transmittance greater than 95%; themetal-oxide layer is chosen from the group consisting of indium-tinoxide, cerium-tin oxide, antimony-tin oxide, indium-zinc oxide, and zincoxide. The reflection layer 227 is disposed on the planarized bufferlayer 226. The root-mean-square roughness of the surface between theplanarized buffer layer 226 and the reflection layer 227 is less than 20Å. The reflection layer 227 is chosen from the group consisting ofsilver, gold, aluminum, and copper. Finally, the two electrodes 228, 229are disposed on the first-type doping layer 222 and the reflection layer227, respectively.

FIG. 3 shows a structure diagram according to another preferredembodiment of the present invention. As shown in the figure, the LEDdevice 22 according to the above embodiment is used in a flip-chippackaged LED device 2, which comprises a packaging substrate 20 and theLED device 22. The LED device 22 is flipped on and connectedelectrically with the packaging substrate 20. The LED device 22 isconnected electrically with the packaging substrate 20 by a eutecticstructure 24.

The Ohmic-contact characteristics between the second-type doping layer224 and the reflection layer 227 in the above embodiment is enhancedmainly by means of the Ohmic-contact layer 225. Because theOhmic-contact layer 225 has high electrical conductivity, the currentconduction between the second-type doping layer 224 and the reflectionlayer 227 can be improved effectively, and thus enhancing theOhmic-contact characteristics between the second-type doping layer 224and the reflection layer 227.

Because the Ohmic-contact layer 225 has high electrical conductivity,its light transmittance is lowered. In order to maintain the lighttransmittance of the Ohmic-contact layer 225, its thickness is less than5000 Å. Thereby, the light emitted by the light emitting layer 223 willnot be absorbed too much by the Ohmic-contact layer 225, and henceenabling the light emitting efficiency of the LED device unaffected.

Because the thickness of the Ohmic-contact layer 225 is very thin, itssurface is relatively rougher. For avoiding the scattering phenomenon onthe reflected light produced by the surface of the Ohmic-contact layer225, according to the present embodiment, the planarized buffer layer226 is used for mending the surface of the Ohmic-contact layer 225. Thethickness of the planarized buffer layer 226 is between 500 to 5000 Åfor reducing effectively the scattering phenomenon on the reflectedlight produced by the surface of the Ohmic-contact layer 225. Theroot-mean-square roughness of the surface between the planarized bufferlayer 226 and the reflection layer 227 is less than 20 Å for adheringthe reflection layer 227 smoothly to the planarized buffer layer 226. Inaddition, the reflection layer 227 can have the effect of mirrorreflection by means if the planarized buffer layer 226.

The thickness of the Ohmic-contact layer 225 according to the presentembodiment is thinner with light transmittance greater than 90%.Thereby, the light emitted by the light emitting layer 223 will not beabsorbed too much by the Ohmic-contact layer 225; most of the light cantransmit the Ohmic-contact layer 225. Besides, the light transmittanceof the planarized buffer layer 226 is higher than 95%. Most of the lightcan transmit the planarized buffer layer 226 and reach the reflectionlayer 227. Hence, the light emitting efficiency of the LED device 22will not be affected.

By comparing the present invention with the prior art, it is known thataccording to the prior art, only the Ohmic-contact layer, which is asingle-layer metal-oxide layer, is disposed between the reflection layerand the second-type doping layer. By making the Ohmic-contact layerhighly electrically conductive, its light transmittance will be lowered,leading to reduction in the light emitting efficiency of the LED device,which, in turn, lowers the light emitting efficiency of the flip-chippackaged LED device. If the Ohmic-contact layer is thinned, its surfacewill be rough, resulting in scattering of the reflected light. The LEDdevice 22 according to the present invention adopts the planarizedbuffer layer 226 disposed on the thin Ohmic-contact layer 225 forreducing the scattering phenomenon on the reflected light owing to thesurface of the Ohmic-contact layer 225. In addition, the Ohmic-contactlayer 225 according to the present embodiment can make the Ohmic-contactcharacteristics between the second-type doping layer 224 and thereflection layer 227 superior without affecting the light emittingefficiency of the LED device 22. Accordingly, the light emittingefficiency of the flip-chip packaged LED device 2 will not be affectedeither.

FIG. 4 shows a structure diagram according to another preferredembodiment of the present invention. As shown in the figure, in additionto the embodiment shown in FIG. 2, the LED device 22 further comprises acover layer 230 disposed between the reflection layer 227 and theelectrode 229 and extending to the sidewall of the reflection layer 227.The cover layer 230 is used for prevent the migration phenomenon of themetal ions in the reflection layer 227.

FIG. 5 shows a structure diagram according to another preferredembodiment of the present invention. As shown in the figure, the presentembodiment provides another LED device 22. The difference between theLED device 22 and the one in FIG. 2 is that the LED device 22 accordingto the present embodiment has a plurality of Ohmic-contact layers 225 aand a plurality of planarized buffer layers 226 a stacked together. EachOhmic-contact layer 225 a has the characteristics of high electricalconductivity and high refractivity. Thereby, before part of the lightemitted by the light emitting layer 223 reaches the reflection layer227, the light has already been refracted by the plurality ofOhmic-contact layers 225 a for enhancing the light emitting efficiencyof the flip-chip packages LED device 2. Besides, the plurality ofplanarized buffer layers 226 a have the effect of smoothening eachOhmic-contact layer 225 a. Hence, the scattering phenomenon on thereflected light caused by the surface of each Ohmic-contact layer 225 acan be avoided.

To sum up, the present invention provides an LED device and a flip-chippackages LED device. The LED device is flipped on and connectedelectrically with the packaging substrate and thus forming the flip-chippackaged LED device. The LED device has the Ohmic-contact layer and theplanarized buffer layer. The Ohmic-contact layer enhances the currentconduction between the second-type doping layer and the reflection layerand thus improving the Ohmic-contact characteristics of the LED device.The planarized buffer layer smoothens the surface of the Ohmic-contactlayer, which enables the reflection layer to attach to the planarizedbuffer layer smoothly and achieving the effect of mirror reflection aswell as reducing the scattering phenomenon of the reflected light. Bydisposing the Ohmic-contact layer and the planarized buffer layer, theLED device and the flip-chip packages LED device according to thepresent invention can have superior Ohmic-contact characteristicswithout affecting the light emitting efficiency thereof.

Accordingly, the present invention conforms to the legal requirementsowing to its novelty, nonobviousness, and utility. However, theforegoing description is only embodiments of the present invention, notused to limit the scope and range of the present invention. Thoseequivalent changes or modifications made according to the shape,structure, feature, or spirit described in the claims of the presentinvention are included in the appended claims of the present invention.

1. A light emitting diode device, comprising: a first-type doping layer;a second-type doping layer; a light emitting layer disposed between thefirst-type doping layer and the second-type doping layer; anOhmic-contact layer disposed on the second-type doping layer; a materiallayer disposed on the Ohmic-contact layer, the material layer at leastcomprising a metal oxide layer; a first electrode disposed on andelectrically connected to the first-type doping layer; a secondelectrode; and a metal layer disposed between the second electrode andthe Ohmic-contact layer, the second electrode being electricallyconnected to the Ohmic-contact layer through the metal layer.
 2. Thelight emitting diode device of claim 1, wherein a light transmittance ofthe Ohmic-contact layer is greater than 90%.
 3. The light emitting diodedevice of claim 1, wherein a light transmittance of the material layeris greater than 95%.
 4. The light emitting diode device of claim 1further comprising a cover layer, wherein the cover layer is disposed onthe metal layer and extends to a sidewall of the metal layer.
 5. Thelight emitting diode device of claim 1, wherein a portion of the lightemitted from the light emitting layer passes through the Ohmic-contactlayer as well as the material layer and is reflected by the metal layer.6. A light emitting diode device, comprising: a first-type doping layer;a second-type doping layer; a light emitting layer disposed between thefirst-type doping layer and the second-type doping layer; anOhmic-contact layer disposed on the second-type doping layer; an oxidestacking layer comprising a plurality of oxide layers stacked on theOhmic-contact layer; a first electrode disposed on and electricallyconnected to the first-type doping layer; a second electrodeelectrically connected to the Ohmic-contact layer; and a metalreflection layer, wherein the oxide stacking layer and the metalreflection layer are disposed between the second electrode and theOhmic-contact layer.
 7. The light emitting diode device of claim 6,wherein a light transmittance of the Ohmic-contact layer is greater than90%.
 8. The light emitting diode device of claim 6, wherein a portion ofthe light emitted from the light emitting layer passes through theOhmic-contact layer and is reflected by the metal reflection layer.
 9. Alight emitting diode device, comprising: a first-type doping layer; asecond-type doping layer; a light emitting layer disposed between thefirst-type doping layer and the second-type doping layer; anOhmic-contact layer disposed on the second-type doping layer; an oxidestacking layer comprising a plurality of oxide layers stacked on theOhmic-contact layer; a first electrode disposed on and electricallyconnected to the first-type doping layer; a second electrodeelectrically connected to the Ohmic-contact layer; and a metalreflection layer, wherein the oxide stacking layer and the metalreflection layer are disposed between the second electrode and theOhmic-contact layer, and the second electrode is electrically connectedto the Ohmic-contact layer through the metal reflection layer.
 10. Thelight emitting diode device of claim 9, wherein a light transmittance ofthe Ohmic-contact layer is greater than 90%.
 11. The light emittingdiode device of claim 9, wherein a portion of the light emitted from thelight emitting layer passes through the Ohmic-contact layer and isreflected by the metal reflection layer.
 12. A light emitting diodedevice, comprising: a first-type doping layer; a second-type dopinglayer; a light emitting layer disposed between the first-type dopinglayer and the second-type doping layer; an Ohmic-contact layer disposedon the second-type doping layer; a first electrode disposed on andelectrically connected to the first-type doping layer; a secondelectrode electrically connected to the Ohmic-contact layer; a metalreflection layer disposed between the second electrode and theOhmic-contact layer; and at least one oxide layer disposed between theOhmic-contact layer and the metal reflection layer.
 13. The lightemitting diode device of claim 12, wherein a light transmittance of theOhmic-contact layer is greater than 90%.
 14. The light emitting diodedevice of claim 12, wherein a light transmittance of the oxide layer isgreater than 95%.
 15. The light emitting diode device of claim 12further comprising a cover layer, wherein the cover layer is disposedbetween the Ohmic-contact layer and the second electrode.
 16. The lightemitting diode device of claim 12, wherein a portion of the lightemitted from the light emitting layer passes through the Ohmic-contactlayer as well as the oxide layer and is reflected by the metalreflection layer.
 17. A light emitting diode device, comprising: afirst-type doping layer; a second-type doping layer; a light emittinglayer disposed between the first-type doping layer and the second-typedoping layer; an Ohmic-contact layer disposed on the second-type dopinglayer; a first electrode disposed on and electrically connected to thefirst-type doping layer; a second electrode; a metal reflection layerdisposed between the second electrode and the Ohmic-contact layer; andat least one oxide layer disposed between the Ohmic-contact layer andthe metal reflection layer, wherein the second electrode is electricallyconnected the Ohmic-contact layer through the metal reflection layer.18. The light emitting diode device of claim 17, wherein a lighttransmittance of the Ohmic-contact layer is greater than 90%.
 19. Thelight emitting diode device of claim 17, wherein a light transmittanceof the oxide layer is greater than 95%.
 20. The light emitting diodedevice of claim 17 further comprising a cover layer, wherein the coverlayer is disposed between the Ohmic-contact layer and the secondelectrode.
 21. The light emitting diode device of claim 20, wherein thecover layer is disposed on the metal reflection layer and extends to asidewall of the metal reflection layer.
 22. The light emitting diodedevice of claim 17, wherein a portion of the light emitted from thelight emitting layer passes through the Ohmic-contact layer as well asthe oxide layer and is reflected by the metal reflection layer.
 23. Alight emitting diode device, comprising: a first-type doping layer; asecond-type doping layer; a light emitting layer disposed between thefirst-type doping layer and the second-type doping layer; anOhmic-contact layer disposed on the second-type doping layer; a firstelectrode disposed on and electrically connected to the first-typedoping layer; a second electrode electrically connected to theOhmic-contact layer; and a material stacking layer disposed between thesecond electrode and the Ohmic-contact layer, the material stackinglayer comprising a plurality of first material layers and a plurality ofsecond material layers stacked alternately, wherein light transmittanceof the first material layers differs from light transmittance of thesecond material layers.
 24. The light emitting diode device of claim 23,wherein a light transmittance of the Ohmic-contact layer is greater than90%.
 25. The light emitting diode device of claim 23 further comprisinga metal layer disposed between the second electrode and theOhmic-contact layer, wherein a portion of the light emitted from thelight emitting layer passes through the Ohmic-contact layer and isreflected by the metal layer.